CLOs on the Move

Sidense Corp., founded in 2004, is a leading developer of silicon-proven, embedded non-volatile memory (NVM) intellectual property (IP). Sidense`s patented 1T-Fuse™-based one-transistor one-time programmable (1T-OTP) memory enables a wide range of electronic products that are built with complex System-on-Chip (SoC) semiconductors. End-market products include home entertainment consumer products, cellular telephones and other mobile communications devices, configurable processors, RFID, medical, industrial, automotive and a host of others. Semiconductor and systems companies integrate Sidense 1T-OTP IP macros into their SoC designs, saving time and money and allowing them to focus on the core competencies that differentiate their products. Sidense provides memory IP ...

Sidense Corp., founded in 2004, is a leading developer of silicon-proven, embedded non-volatile memory (NVM) intellectual property (IP). Sidense`s patented 1T-Fuse™-based one-transistor one-time programmable (1T-OTP) memory enables a wide range of electronic products that are built with complex System-on-Chip (SoC) semiconductors. End-market products include home entertainment consumer products, cellular telephones and other mobile communications devices, configurable processors, RFID, medical, industrial, automotive and a host of others. Semiconductor and systems companies integrate Sidense 1T-OTP IP macros into their SoC designs, saving time and money and allowing them to focus on the core competencies that differentiate their products. Sidense provides memory IP that is difficult and uneconomical for the device makers to try to create on their own. Important requirements of Sidense customers include the need to incorporate NVM that can be manufactured on a standard-logic CMOS process with no additional masks or process steps, is field-programmable, has a very small footprint, very fast read access times, is extremely difficult to reverse engineer, and has very low operating and standby power consumption. Sidense is the only supplier of antifuse 1T-OTP IP that can meet all of these demanding requirements at the leading semiconductor foundries from 180nm to 20nm, with development underway at smaller geometries.

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